Characterization of unicompositional GaInP2 ordering heterostructures grown by variation of V/III ratio

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Publication Type Journal Article
School or College College of Science; College of Engineering
Department Physics; Materials Science & Engineering; Electrical & Computer Engineering
Creator Stringfellow, Gerald B.;Inglefield, Colin E.;Taylor, P. Craig
Other Author DeLong, M. C.; Chun, Y. S.; Ho, I. H.; Kim, J. H.; Seong, T. Y.
Title Characterization of unicompositional GaInP2 ordering heterostructures grown by variation of V/III ratio
Date 1997
Description Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies are employed to investigate single heterostructures based on two GaInP2 layers that have the same composition but different degrees of order on the cation sublattice. Four sample configurations are studied: two complementary single heterostructures, a more ordered layer grown on a less ordered layer and vice versa, and two single layers nominally equivalent to the constituent layers of the heterostructures. The degree of order of the two layers was controlled via the V/III ratio used during organometallic vapor phase epitaxial growth. From our measurements, the difference between the band gaps of the two layers is 20-30 meV. The PLE spectra show clearly that the emission comes from both layers of the heterostructures and that the PL is excited by direct absorption of the exciting light into each layer as well as the injection of carriers from the less ordered (higher band gap) layer into the more ordered (lower band gap) layer. The data clearly show that the heterostructures contain two layers, each very similar to the corresponding single layer sample.
Type Text
Publisher American Institute of Physics (AIP)
Volume 82
Issue 10
First Page 5107
Last Page 5113
Subject Heterostructures; Growth parameters; Growth temperature
Subject LCSH Epitaxy; Metal organic chemical vapor deposition
Language eng
Bibliographic Citation Inglefield, C. E., DeLong, M. C., Taylor, P. C., Chun, Y. S., Ho, I. H., Stringfellow, G. B., Kim, J. H., Seong, T. Y. (1997). Characterization of unicompositional GaInP2 ordering heterostructures grown by variation of V/III ratio. Journal of Applied Physics, 82(10), 5107-13.
Rights Management (c)American Institute of Physics. The following article appeared in Stringfellow, G. B., Inglefield, C. E., DeLong, M. C., Taylor, P. C., Chun, Y. S., Ho, I. H., Kim, J. H., Seong, T. Y., Journal of Applied Physics. 82(10), 1997
Format Medium application/pdf
Format Extent 90,186 bytes
Identifier ir-main,1881
ARK ark:/87278/s68d0dv9
Setname ir_uspace
Date Created 2012-06-13
Date Modified 2021-05-06
ID 706861
Reference URL https://collections.lib.utah.edu/ark:/87278/s68d0dv9
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