Bandgap and band offsets determination of semiconductor heterostructures using three-terminal ballistic carrier spectroscopy

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Publication Type Journal Article
School or College College of Engineering
Department Materials Science & Engineering
Creator Scarpulla, Michael
Other Author Yi, Wei; Narayanamurti, Venkatesh; Lu, Hong; Gossard, Arthur C.... et. al
Title Bandgap and band offsets determination of semiconductor heterostructures using three-terminal ballistic carrier spectroscopy
Date 2009
Description Among the most important properties of semiconductors are their bandgaps and how the total bandgap difference distributes between the conduction band offset ΔEC and the valence band offset ΔEV at the heterojunction (HJ) interface between two semiconductors. Understanding such properties is crucial for the design of HJ devices. Traditionally, bandgaps are measured mostly with optical spectroscopies such as absorption and photoluminescence (PL). 1. Band offsets are measured electrically by thermionic emission and C-V profiling, optically by absorption and PL, and optoelectrically by photoelectron spectroscopies. However, each of these methods has certain limitations. 2. With a transistor setup, ballistic electron/hole emission spectroscopy (BEES/BHES) utilize ballistic injection of electrons/holes to probe the band offsets of HJs underneath a metalsemiconductor (m-s) interface. 3. However, to obtain the genuine barrier heights, a delta doping is needed to reach a flatband condition across the HJ, which introduces a source of error due to the doping level. 4. Most of the aforementioned methods require separately designed n-type and p-type HJs to measure ΔEC and ΔEV independently, therefore, the results are not necessarily self-consistent.
Type Text
Publisher American Institute of Physics (AIP)
Journal Title Applied Physics Letters
Volume 95
Issue 11
First Page 112102
Last Page 112101
DOI 10.1063/1.3224914
citatation_issn 36951
Subject Bandgaps; Band offsets; Gallium arsenide
Subject LCSH Semiconductors; Heterojunctions; Holes (Electron deficiencies); Semiconductor doping
Language eng
Bibliographic Citation Yi, W., Narayanamurti, V., Lu, H., Scarpulla, M., & Gossard, A. C. (2009). Bandgap and band offsets determination of semiconductor heterostructures using three-terminal ballistic carrier spectroscopy. Applied Physics Letters, 95(11), 112102-1-3.
Rights Management (c)American Institute of Physics. The following article appeared in by Yi, W., Narayanamurti, V., Lu, H., Scarpulla, M., & Gossard, A. C. Applied Physics Letters, 95(11), 2009 and may be found at http://dx.doi.org/10.1063/1.3224914.
Format Medium application/pdf
Format Extent 204,021 bytes
Identifier ir-main,12246
ARK ark:/87278/s63v01t7
Setname ir_uspace
Date Created 2012-06-13
Date Modified 2021-05-06
ID 706840
Reference URL https://collections.lib.utah.edu/ark:/87278/s63v01t7
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