Role of vacancy on trapping interstitial O in heavily As-doped Si

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Publication Type Journal Article
School or College College of Engineering
Department Materials Science & Engineering
Creator Liu, Feng
Other Author Lu, Guang-Hong; Wang, Q.
Title Role of vacancy on trapping interstitial O in heavily As-doped Si
Date 2008
Description We have investigated the interstitial oxygen (Oi) diffusion in heavily arsenic (As)-doped Si using first-principles calculations. We show that it is not the As per se but the Si vacancy (V) that trap Oi to reduce its diffusion. Arsenic actually plays the role of an arbitrator to activate thermal generation of As-V pairs, which in turn trap Oi with a large binding energy of ~1.0 eV, in quantitative agreement with experiments. Our finding solves a long-standing puzzle on the atomistic mechanism underlying the retardation of Oi precipitation in heavily As-doped Si.
Type Text
Publisher American Institute of Physics (AIP)
Journal Title Applied Physics Letters
Volume 92
Issue 21
First Page 211906
DOI 10.1063/1.2937308
citatation_issn 36951
Subject Vacancy; Interstitial oxygen; As-doped Si; Arsenic doped silicon; Oxygen trapping; Oxygen diffusion
Subject LCSH Doped semiconductors
Language eng
Bibliographic Citation Lu, G. H., Wang, Q., & Liu, F. (2008). Role of vacancy on trapping interstitial O in heavily As-doped Si. Applied Physics Letters, 92(21), 211906.
Rights Management (c)American Institute of Physics. The following article appeared in Lu, G. H., Wang, Q., & Liu, F., Applied Physics Letters, 92(21), 2008 and may be found at http://dx.doi.org/10.1063/1.2937308
Format Medium application/pdf
Format Extent 200,135 bytes
Identifier ir-main,12117
ARK ark:/87278/s6h710cw
Setname ir_uspace
Date Created 2012-06-13
Date Modified 2021-05-06
ID 706424
Reference URL https://collections.lib.utah.edu/ark:/87278/s6h710cw
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