Spatial mapping of ordered and disordered domains of GaInP by near-field scanning optical microscopy and scanning capacitance microscopy

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Publication Type Journal Article
School or College College of Science; College of Engineering
Department Physics; Materials Science & Engineering; Electrical & Computer Engineering
Creator Stringfellow, Gerald B.; Williams, Clayton C.
Other Author Leong, J. K.; McMurray, J.
Title Spatial mapping of ordered and disordered domains of GaInP by near-field scanning optical microscopy and scanning capacitance microscopy
Date 1996-04-13
Description Imaging of topography, locally induced photoluminescence and Fermi-level pinning in adjacent ordered and disordered domains on a cleaved GaInP sample is performed using a near-field scanning optical microscope and scanning capacitance microscope at room temperature in air. Highly localized photoluminescence spectra obtained by the near-field scanning optical microscope on these domains show spectral peaks at 680 nm (ordered) and 648 nm (disordered) GaInP. The near-field scanning optical microscope and scanning capacitance microscope data confirm previously published data, indicating that the electronic surface structure of ordered GaInP is significantly different from that of disordered GaInP. Both approaches indicate that the Fermi-level at the surface of ordered GaInP is pinned, while the Fermi-level at the surface of disordered GaInP is not pinned. The size, structure, and position of the ordered and disordered domains observed by the near-field scanning optical microscope and scanning capacitance microscope agree with those obtained by cathodoluminescence and Kelvin probe force microscopy
Type Text
Publisher American Institute of Physics (AIP)
Volume 14
Issue 4
First Page 3113
Last Page 3116
Subject Gallium Phosphides; Surface Structure; Photoluminescence
Subject LCSH Order-Disorder in alloys; Atomic force microscopy
Language eng
Bibliographic Citation Stringfellow, G. B., Leong, J. K., McMurray, J., & Williams, C. C. (1996). Spatial mapping of ordered and disordered domains of GaInP by near-field scanning optical microscopy and scanning capacitance microscopy. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 14(4), 3113-6.
Rights Management (c)American Institute of Physics. The following article appeared in Stringfellow, G. B., Leong, J. K., McMurray, J., & Williams, C. C., Journal of Vacuum Science Technology. B., 14(4) 1996
Format Medium application/pdf
Format Extent 143,811 bytes
Identifier ir-main,1888
ARK ark:/87278/s6gx4w2b
Setname ir_uspace
Date Created 2012-06-13
Date Modified 2021-05-06
ID 706102
Reference URL https://collections.lib.utah.edu/ark:/87278/s6gx4w2b
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