Doping studies of Ga0.5In0.5P organometallic vapor-phase epitaxy

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Publication Type Journal Article
School or College College of Engineering
Department Electrical & Computer Engineering; Materials Science & Engineering
Creator Stringfellow, Gerald B.
Other Author Hsu, C. C.; Yuan, J. S.; Cohen, R. M.
Title Doping studies of Ga0.5In0.5P organometallic vapor-phase epitaxy
Date 1986
Description Presents doping studies of gallium[sub0.5] indium[sub0.5] phosphorus organometallic vapor-phase epitaxy. Distribution coefficient of indium; Description of growth conditions; Case of poor growth morphology for gallium[sub0.5] indium[sub0.5] phosphorus.
Type Text
Publisher American Institute of Physics (AIP)
Volume 59
Issue 2
First Page 395
Last Page 398
Subject Phosphorus; Gallium; Doping
Subject LCSH Epitaxy; Metal organic chemical vapor deposition
Language eng
Bibliographic Citation Stringfellow, G. B., Hsu, C. C., Yuan, J. S., & Cohen, R. M. (1986). Doping studies of Ga0.5In0.5P organometallic vapor-phase epitaxy. Journal of Applied Physics, 59(2), 395-8.
Rights Management (c)American Institute of Physics. The following article appeared in Stringfellow, G. B., Hsu, C. C., Yuan, J. S., & Cohen, R. M. Applied PHysics Letters. 59(2), 1986
Format Medium application/pdf
Identifier ir-main,11533
ARK ark:/87278/s6wd4j19
Setname ir_uspace
ID 705860
Reference URL https://collections.lib.utah.edu/ark:/87278/s6wd4j19
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