Compensation-dependent in-plane magnetization reversal processes in Ga1-xMnxP1-ySy

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Publication Type Journal Article
School or College College of Engineering
Department Materials Science & Engineering
Creator Scarpulla, Michael
Other Author Stone, P. R.; Bihler, C.; Kraus, M.; Beeman, J. W.; Yu, K. M.; Brandt, M. S.; Dubon, O. D.
Title Compensation-dependent in-plane magnetization reversal processes in Ga1-xMnxP1-ySy
Date 2008-12
Description We report the effect of dilute alloying of the anion sublattice with S on the in-plane uniaxial magnetic anisotropy and magnetization reversal process in Ga1−xMnxP as measured by both ferromagnetic resonance (FMR) spectroscopy and superconducting quantum interference device (SQUID) magnetometry. At T=5 K, raising the S concentration increases the uniaxial magnetic anisotropy between in-plane [011] directions while decreasing the magnitude of the (negative) cubic anisotropy field. Simulation of the SQUID magnetometry indicates that the energy required for the nucleation and growth of domain walls decreases with increasing y. These combined effects have a marked influence on the shape of the field-dependent magnetization curves; while the [01¯1] direction remains the easy axis in the plane of the film, the field dependence of the magnetization develops double hysteresis loops in the [011] direction as the S concentration increases, similar to those observed for perpendicular magnetization reversal in lightly doped Ga1−xMnxAs. The incidence of double hysteresis loops is explained with a simple model whereby magnetization reversal occurs by a combination of coherent spin rotation and noncoherent spin switching, which is consistent with both FMR and magnetometry experiments. The evolution of magnetic properties with S concentration is attributed to compensation of Mn acceptors by S donors, which results in a lowering of the concentration of holes that mediate ferromagnetism.
Type Text
Publisher American Physical Society
Journal Title Physical Review B
Volume 78
Issue 21
First Page 214421-1
Last Page 214421-9
DOI 10.1103/PhysRevB.78.214421
citatation_issn 1098-0121
Subject Ferromagnetic semiconductors; Nonmagnetic compensation
Subject LCSH Semiconductors -- Magnetic properties; Ferromagnetic resonance; Anisotropy; Holes (Electron deficiencies); Semiconductor doping; Thin films; Semiconductors -- Defects
Language eng
Bibliographic Citation Stone, P. R., Bihler, C., Kraus, M., Scarpulla, M., Beeman, J. W., Yu, K. M., Brandt, M. S., & Dubon, O. D. (2008). Compensation-dependent in-plane magnetization reversal processes in Ga1-xMnxP1-ySy. Physical Review B, 78(21), 214421.
Rights Management (c) American Physical Society
Format Medium application/pdf
Format Extent 705,734 bytes
Identifier ir-main,12248
ARK ark:/87278/s6nk3zg8
Setname ir_uspace
Date Created 2012-06-13
Date Modified 2021-05-06
ID 705534
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