Atomic force microscopy study of ordered GaInP

Update item information
Publication Type Journal Article
School or College College of Engineering
Department Electrical & Computer Engineering; Materials Science & Engineering
Creator Stringfellow, Gerald B.
Other Author Su, L.C.; Strausser, Y.E.; Thornton, J.T.
Title Atomic force microscopy study of ordered GaInP
Date 1995
Description Examines the nature of the steps on the surface of gallium indium phosphide lattice layers matched to gallium arsenide substrates using atomic force microscopy. Temperatures of organometallic vapor phase epitaxy used; Relation of height of steps with misorientation angle; Link of supersteps with the degree of order and the microstructure of ordered domains.
Type Text
Publisher American Institute of Physics (AIP)
Volume 66
Issue 23
Subject Surface chemistry; Lattice theory
Subject LCSH Surface active agents; Order-disorder in alloys; Epitaxy
Language eng
Bibliographic Citation Stringfellow, G.B., Su, L.C., Strausser, Y.E., & Thornton, J.T. (1995). "Atomic force microscopy study of ordered GaInP ." Applied Physics Letters, 66(23), 3155.
Rights Management (c)American Institute of Physics. The following article appeared in (Stringfellow, G.B., Su, L.C., Strausser, Y.E., & Thornton, J.T., Applied Physics Letters. 66(23), 1995
Format Medium application/pdf
Identifier ir-main,11773
ARK ark:/87278/s62j6w88
Setname ir_uspace
Date Created 2012-06-13
Date Modified 2021-05-06
ID 705177
Reference URL https://collections.lib.utah.edu/ark:/87278/s62j6w88
Back to Search Results