Bandgap control of GaInP using Sb as a surfactant

Update item information
Publication Type Journal Article
School or College College of Engineering
Department Electrical & Computer Engineering; Materials Science & Engineering
Creator Stringfellow, Gerald B.
Title Bandgap control of GaInP using Sb as a surfactant
Date 1999-09-27
Description The use of surfactants to control specific aspects of the vapor-phase epitaxial growth process is beginning to be studied for both the elemental and III/V semiconductors. To date, most reported surfactant effects for semiconductors relate to the morphology of the growing films. However, semiconductor alloys with CuPt ordering exhibit much more dramatic effects. The change in the CuPt order parameter induced by the surfactant translates into a marked change in the band-gap energy. Previous work concentrated on the effects of the donor tellurium. Te is less than ideal as a surfactant, since the change in band-gap energy is coupled to a large change in the conductivity. This letter presents the results of a study of the effects of an isoelectronic surfactant on the ordering process in GaInP. Sb has been found to act as a surfactant during organometallic vapor-phase epitaxial growth. At an estimated Sb concentration in the solid of 1_x0002_10_x0003_4, order is eliminated, as indicated by the band-gap energy. Surface photoabsorption _x0002_SPA_x0003_ data indicate that the effect is due to a change in the surface reconstruction. Adding Sb leads to attenuation of the peak at 400 nm in the SPA spectrum associated with _x0004_1¯ 10_x0005_ P dimers. The addition of Sb during the growth cycle has been used to produce a heterostructure with a 135 meV band-gap difference between two layers with the same solid composition.
Type Text
Publisher American Institute of Physics (AIP)
Volume 75
Issue 13
First Page 1914
Last Page 1916
Subject Band-gap energy; Growth process; Epitaxial growth
Subject LCSH Surface active agents; Order-disorder in alloys
Language eng
Bibliographic Citation Shurtleff, J.K., Lee, R.T., Fetzer, C.M., & Stringfellow, G.B. (1999). "Bandgap control of GaInP using Sb as a surfactant." Applied Physics Letters, 75(13), 1914-16.
Rights Management (c)American Institute of Physics. The following article appeared in Shurtleff, J.K., Lee, R.T., Fetzer, C.M., & Stringfellow, G.B., Applied Physics Letters. 75(13), 1999
Format Medium application/pdf
Format Extent 54,982 bytes
Identifier ir-main,1938
ARK ark:/87278/s6bc4gxt
Setname ir_uspace
Date Created 2012-06-13
Date Modified 2021-05-06
ID 705113
Reference URL
Back to Search Results