Making a field effect transistor on a single graphene nanoribbon by selective doping

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Publication Type Journal Article
School or College College of Engineering
Department Materials Science & Engineering
Creator Liu, Feng
Other Author Huang, Bing; Yan, Qimin; Zhou, Gang; Wu, Jian; Gu, Bing-Lin; Duan, Wenhui
Title Making a field effect transistor on a single graphene nanoribbon by selective doping
Date 2007
Description Using first-principles electronic structure calculations, we show a metal-semiconductor transition of a metallic graphene nanoribbon with zigzag edges induced by substitutional doping of nitrogen or boron atoms at the edges. A field effect transistor consisting of a metal-semiconductor-metal junction can then be constructed by selective doping of the ribbon edges. The current-voltage characteristics of such a prototype device is determined by the first-principles quantum transport calculations.
Type Text
Publisher American Institute of Physics (AIP)
Journal Title Applied Physics Letters
Volume 91
Issue 25
First Page 253122
DOI 10.1063/1.2826547
citatation_issn 36951
Subject Graphene nanoribbon; Selective doping
Subject LCSH Field-effect transistors; Semiconductor doping
Language eng
Bibliographic Citation Huang, B., Yan, Q., Zhou, G., Wu, J., Gu, B.-L., Duan, W., & Liu F. (2007). Making a field effect transistor on a single graphene nanoribbon by selective doping. Applied Physics Letters, 91(25), 253122.
Rights Management (c)American Institute of Physics. The following article appeared in Huang, B., Yan, Q., Zhou, G., Wu, J., Gu, B.-L., Duan, W., & Liu F., Applied Physics Letters, 91(25), 2007 and may be found at http://dx.doi.org/10.1063/1.2826547
Format Medium application/pdf
Format Extent 391,292 bytes
Identifier ir-main,12123
ARK ark:/87278/s67s865c
Setname ir_uspace
Date Created 2012-06-13
Date Modified 2021-05-06
ID 705075
Reference URL https://collections.lib.utah.edu/ark:/87278/s67s865c
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