Rectifying electrical characteristics of La0.7Sr0.3MnO3/Zno heterostructure

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Publication Type Journal Article
School or College College of Engineering
Department Materials Science & Engineering
Creator Tiwari, Ashutosh
Other Author Jin, C.; Kumar, D.; Narayan, J.
Title Rectifying electrical characteristics of La0.7Sr0.3MnO3/Zno heterostructure
Date 2003
Description We have fabricated a p - n junction, consisting of p-type manganite (La0.7Sr0.3MnO3) and n-type ZnO layers grown on sapphire substrate. This junction exhibits excellent rectifying behavior over the temperature range 20-300 K. Electrical characteristics of La0.7Sr0.3MnO3 (LSMO) film in this heterostructure are found to be strongly modified by the built-in electric field at the junction. It has been shown that by applying the external bias voltage, the thickness of the depletion layer, and hence, the electrical and magnetic characteristics of LSMO film can precisely be modified.
Type Text
Publisher American Institute of Physics (AIP)
Journal Title Applied Physics Letters
Volume 83
Issue 9
First Page 1773
Last Page 1775
DOI 10.1063/1.1605801
citatation_issn 36951
Subject Manganites
Subject LCSH Zinc oxide; Thin films; Semiconductor doping; Semiconductors -- Junctions; Magnetoresistance; Manganese oxides -- Electric properties; Manganese oxides -- Magnetic properties
Language eng
Bibliographic Citation Tiwari, A., Jin, C., Kumar, D., & Narayan, J. (2003). Rectifying electrical characteristics of La0.7Sr0.3MnO3/Zno heterostructure. Applied Physics Letters 83(9), 1773-5.
Rights Management (c)American Institute of Physics. The following article appeared in Tiwari, A., Jin, C., Kumar, D., & Narayan, J., Applied Physics Letters, 83(9), 2003 and may be found at http://dx.doi.org/10.1063/1.1605801
Format Medium application/pdf
Format Extent 197,013 bytes
Identifier ir-main,12079
ARK ark:/87278/s65h80mb
Setname ir_uspace
Date Created 2012-06-13
Date Modified 2021-05-06
ID 704769
Reference URL https://collections.lib.utah.edu/ark:/87278/s65h80mb
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