Chemical beam epitaxial growth of InP and GaP by using tertiarybutylbis (dimethylamino) phosphine

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Publication Type Journal Article
School or College College of Engineering
Department Electrical & Computer Engineering
Creator Stringfellow, Gerald B.; Sadwick, Laurence P.
Other Author Ryu, Hyukhun; Kim, Cho-Rong; Lee, Jaeyeop; Leem, Jae-Young
Title Chemical beam epitaxial growth of InP and GaP by using tertiarybutylbis (dimethylamino) phosphine
Date 2007
Description We report the growth of indium phosphide (InP) by using a chemical beam epitaxy (CBE) technique with the group V source tertiarybutylbis (dimethylamino) phosphine (TBBDMAP). The photoluminescence spectra at 15 K showed that the intensity of a peak attributed to impurity recombination and the FWHM increased significantly when the cracker temperature exceed 545 ºC. This paper also reports the growth of GaP without precracking of the TBBDMAP source. While it was not possible to grow InP at 450 ºC, GaP was successfully grown at temperatures as low as 410 ºC, possibly due to the higher Ga-P bond strength which gives a longer TBBDMAP residence time on the surface before desorption. In this study, ethyldimethylindium (EDMIn) and triisopropylgallium (TlPGa) were used as the indium (In) and the gallium (Ga) sources, respectively.
Type Text
Publisher Korean Physical Society
Volume 51
Issue 6
First Page 2051
Last Page 2055
Subject Chemical beam epitaxy; CBE; InP; GaP; Tertiarybutylbis (Dimethylamino) Phosphine; Gallium phosphide; TBBDMAP
Subject LCSH Epitaxy; Indium phosphide
Language eng
Bibliographic Citation Ryu, H., Kim, C.-R., Lee, J., Leem, J.-Y., Sadwick, L. P., & Stringfellow, G. B. (2007). Chemical beam epitaxial growth of InP and GaP by using tertiarybutylbis (dimethylamino) phosphine. Journal of the Korean Physical Society, 51(6), 2051-5.
Rights Management (c)Korean Physical Society
Format Medium application/pdf
Format Extent 594,185 bytes
Identifier ir-main,7821
ARK ark:/87278/s6kw60dd
Setname ir_uspace
ID 704727
Reference URL https://collections.lib.utah.edu/ark:/87278/s6kw60dd
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