Heterostructures in GaInP grown using a change in Te doping

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Publication Type Journal Article
School or College College of Engineering
Department Chemical Engineering; Materials Science & Engineering; Electrical & Computer Engineering
Creator Stringfellow, Gerald B.; Shurtleff, James Kevin
Other Author Hsu, Y.; Fetzer, C.M.; Choi, C.J.; Seong, T.Y.
Title Heterostructures in GaInP grown using a change in Te doping
Date 2000
Description In organometallic vapor phase epitaxy, changes in growth conditions can be used to modulate the extent of CuPt ordering and, hence, the band gap energy of GaInP. One method is to add Te during growth. An increase in the band gap energy of 0.1 eV due to a decrease in ordering has been obtained by increasing the input pressure of diethyltelluride from 0 to 8 10 6 Torr, which corresponds to a doping concentration of 6 1017 cm_3. This simple procedure offers an attractive method to grow quantum wells (QWs) and superlattices, which are useful for band gap engineering, by modulating the input pressure of the Te precursor. Various heterostructures with abrupt interfaces were successfully grown with interruptions at the interfaces between the Te-doped and undoped GaInP layers. QWs as thin as 10 nm can be clearly seen from transmission electron microscope images.
Type Text
Publisher American Institute of Physics (AIP)
Volume 87
Issue 11
First Page 7776
Last Page 7781
Subject Heterostructures; Alloys
Subject LCSH Epitaxy; Metal organic chemical vapor deposition
Language eng
Bibliographic Citation Hsu, Y., Fetzer, C.M., Stringfellow, G.B., Shurtleff, J.K., Choi, C.J., & Seong, T.Y. (2000). "Heterostructures in GaInP grown using a change in Te doping." Journal of Applied Physics, 87(11), 7776-81.
Rights Management (c)American Institute of Physics. The following article appeared in Hsu, Y., Fetzer, C.M., Stringfellow, G.B., Shurtleff, J.K., Choi, C.J., & Seong, T.Y., Journal of Applied Physics. 87(11), 2000
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Identifier ir-main,11737
ARK ark:/87278/s6d51580
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ID 704362
Reference URL https://collections.lib.utah.edu/ark:/87278/s6d51580
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