Bending of nanoscale thin Si film induced by growth of Ge islands: hut vs. dome

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Publication Type Journal Article
School or College College of Engineering
Department Materials Science & Engineering
Creator Liu, Feng
Other Author Huang, Minghuang; Cuma, Martin; Lagally, M. G.
Title Bending of nanoscale thin Si film induced by growth of Ge islands: hut vs. dome
Date 2004
Description We perform atomistic simulations to compute bending of freestanding nanoscale thin Si film induced by strained Ge islands. We show that a larger Ge dome island can induce smaller bending than a smaller hut island and explain the surprising experimental observation for growth of Ge islands on patterned silicon-on-insulator substrate (SOI) with Si template layer thinned down to nanometer scale. This counterintuitive bending behavior is caused by strain sharing between the film and the ultra thin substrate.
Type Text
Publisher Materials Research Society
First Page 183
Last Page 188
Subject Bending; Nanoscale thin Si film; Ge islands; Hut islands; Dome islands; Atomistic simulations
Subject LCSH Thin films; Strain theory (Chemistry)
Language eng
Bibliographic Citation Huang, M., Cuma, M., Lagally, M. G., & Liu, F. (2004). Bending of nanoscale thin Si film induced by growth of Ge islands: hut vs. dome. MRS Proceeding, 791, Q6.4, 183-8.
Rights Management (c) Materials Research Society http://www.mrs.org/
Format Medium application/pdf
Format Extent 1,334,463 bytes
Identifier ir-main,12177
ARK ark:/87278/s6v98sbd
Setname ir_uspace
Date Created 2012-06-13
Date Modified 2021-05-06
ID 703962
Reference URL https://collections.lib.utah.edu/ark:/87278/s6v98sbd
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