Mechanical stability of ultrathin Ge/Si film on SiO2: the effect of Si/SiO2 interface

Update item information
Publication Type Journal Article
School or College College of Engineering
Department Materials Science & Engineering
Creator Liu, Feng
Other Author Huang, Minghuang; Nairn, John A.; Lagally, M. G.
Title Mechanical stability of ultrathin Ge/Si film on SiO2: the effect of Si/SiO2 interface
Date 2005
Description We perform two-dimensional linear elastic finite element analysis to investigate the mechanical stability of ultrathin Ge/Si film grown on or bonded to SiO2, using imperfect interface elements between Si and SiO2 to model Si/SiO2 interfacial slippage. We demonstrate that the overall composite film is stable when only the tangential slippage is allowed, however, it becomes unstable when normal slippage is allowed: the coherently strained Ge island induces a large local bending of Si layer, and separates the Si layer from the underlying SiO2 forming a void at the Si/SiO2 interface.
Type Text
Publisher American Institute of Physics (AIP)
Journal Title Journal of Applied Physics
Volume 97
Issue 11
First Page 116108
DOI 10.1063/1.1926421
citatation_issn 218979
Subject Ultrathin films; Si/SiO2 interface; Mechanical stability
Subject LCSH Nanotechnology; Thin films; Strain theory (Chemistry); Bending
Language eng
Bibliographic Citation Huang, M. H., Nairn, J. A., Liu, F., & Lagally, M. G. (2005). Mechanical stability of ultrathin Ge/Si film on SiO2: the effect of Si/SiO2 interface. Journal of Applied Physics, 97(11), 116108.
Rights Management (c)American Institute of Physics. The following article appeared in Huang, M. H., Nairn, J. A., Liu, F., & Lagally, M. G., Journal of Applied Physics, 97(11), 2005 and may be found at http://dx.doi.org/10.1063/1.1926421
Format Medium application/pdf
Format Extent 155,465 bytes
Identifier ir-main,12160
ARK ark:/87278/s6vm4whg
Setname ir_uspace
Date Created 2012-06-13
Date Modified 2021-05-06
ID 703900
Reference URL https://collections.lib.utah.edu/ark:/87278/s6vm4whg