Spectroscopic study of surfactant enhanced organometallic vapor phase epitaxy growth of GaInP

Samplen s of GaxIn1-xP grown by organometallic vapor phase epitaxy on (001) GaAs substrates by addition of TESb demonstrating a lateral superlattice compositional modulation (CM) have been studied by low temperature polarized photoluminescence (PL), power dependent PL, and photoluminescence excitation (PLE) spectroscopy. Strong polarization is observed in the low temperature PL and PLE spectra at Sb concentrations below that where CuPtB ordering is removed and triple period ordering is produced. Low temperature polarized PL is shown to be the most sensitive optical technique for detecting the presence of CM. The radiative recombination mechanism at low temperature is excitonic, originating from the exponential tail of band gap states observed in the PLE spectra. From the measured band gaps, a continuum model of the band structure allows an estimate of an upper limit of the percent modulation present in the samples. Above Sb/III(v) = 0.01, compositional modulation is the dominant factor determining the low temperature optical properties. The percent fluctuation of composition increases monotonically with increasing Sb during growth. ©2001 American Institute of Physics.