| Publication Type |
Journal Article |
| School or College |
College of Engineering |
| Department |
Electrical & Computer Engineering; Materials Science & Engineering |
| Creator |
Stringfellow, Gerald B. |
| Other Author |
Hall, H.T.; Burmeister, R.A. |
| Title |
Electrical properties of nitrogen doped GaP |
| Date |
1975 |
| Description |
The electrical properties namely, electron concentration and mobility, have been investigated in the temperature range from 53 to 400 K for undoped and nitrogen-doped VPE GaP. |
| Type |
Text |
| Publisher |
American Institute of Physics (AIP) |
| Volume |
46 |
| Issue |
7 |
| First Page |
3006 |
| Last Page |
3011 |
| Subject |
Electron concentration; Ionization energy; Electron mobility |
| Subject LCSH |
Electron mobility; Organometallic compounds |
| Language |
eng |
| Bibliographic Citation |
Stringfellow, G.B., Hall, H.T., & Burmeister, R.A. (1975). Electrical properties of nitrogen doped GaP. Journal of Applied Physics, 46(7), 3006-11. |
| Rights Management |
(c)American Institute of Physics. The following article appeared in Stringfellow, G.B., Hall, H.T., & Burmeister, R.A., Journal of Applied Physics. 46(7), 1975 |
| Format Medium |
application/pdf |
| Format Extent |
466,073 bytes |
| Identifier |
ir-main,1947 |
| ARK |
ark:/87278/s66q2ffk |
| Setname |
ir_uspace |
| ID |
703556 |
| Reference URL |
https://collections.lib.utah.edu/ark:/87278/s66q2ffk |
