Hydrogen induced Si surface segregation on Ge-covered Si(001)

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Publication Type Journal Article
School or College College of Engineering
Department Materials Science & Engineering
Creator Liu, Feng
Other Author Rudkevich, E.; Savage, D. E.; Keuch, T.; McCaughan, L.; Lagally, M. G.
Title Hydrogen induced Si surface segregation on Ge-covered Si(001)
Date 1998-10
Description Using Fourier transform infrared-attenuated total reflectance spectroscopy in conjunction with hydrogen adsorption to probe surface layer composition, we observe a reversible place exchange between Ge and Si on Ge-covered Si(001) when the surface is dosed with atomic H at elevated temperatures. First-principles calculations confirm a thermodynamic driving force for this place exchange. To explain the intriguing kinetics of the place exchange, which shows no time dependence, we propose a dimer-vacancy diffusion-assisted mechanism limited by vacancy interactions.
Type Text
Publisher American Physical Society
Journal Title Physical Review Letters
Volume 81
Issue 16
First Page 3467
Last Page 3470
DOI 10.1103/PhysRevLett.81.3467
citatation_issn 0031-9007
Subject Si surface segregation; Ge-covered; Si(001)
Subject LCSH Surface chemistry
Language eng
Bibliographic Citation Rudkevich, E., Liu, F., Savage, D. E., Keuch, T., McCaughan, L., & Lagally, M. G. (1998). Hydrogen induced Si surface segregation on Ge-covered Si(001). Physical Review Letters, 81(16), 3467-70.
Rights Management (c) American Physical Society http://dx.doi.org/10.1103/PhysRevLett.81.3467
Format Medium application/pdf
Format Extent 150,511 bytes
Identifier ir-main,12207
ARK ark:/87278/s6df78d2
Setname ir_uspace
ID 703539
Reference URL https://collections.lib.utah.edu/ark:/87278/s6df78d2
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