Laser vaporization generation of the SiB and SiAi radicals for matrix isolation electron spin resonance studies: comparison with theoretical calculations and assignment of their electronic ground states as X ??

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Publication Type Journal Article
School or College College of Science
Department Chemistry
Creator Morse, Michael David
Other Author Knight, Lon B.; McKinley, Allan J.; Babb, Robert M.; Arrington, Caleb A.
Title Laser vaporization generation of the SiB and SiAi radicals for matrix isolation electron spin resonance studies: comparison with theoretical calculations and assignment of their electronic ground states as X ??
Date 1993
Description The first experimental spectroscopic study of the SiB and SiAl diatomic radicals is reported. Electron spin resonance results indicate that both molecules have X 4? ground electronic states, in agreement with earlier theoretical calculations. The SIB and SiAl radicals were generated in neon matrices at 4 K by trapping the products produced from the pulsed laser vaporization of their alloys. Electronic structure information for these radicals is especially interesting given the utilization of silicon doped materials in semiconductor applications. The observedn uclear hyperfine interactions (A tensors) for 10B, 11B and 27A1l n these molecular radicals were compared with the results of ab initia configuration-interaction theoretical calculationswhich were conducted as part of this experimental study. The neon matrix magnetic parameters (MHz) for Si 11B are 0=800(2), gll =2.0014(8), g, =2.0005(4), A, =92.4(5), and A,, =111(2). For Si27A1 the results (MHz) are 0=9710(2), gll =1.9994(8), and gL = 1.9978(4), IAL [ =10.3(6), and [A,? [=43.5(g).
Type Text
Publisher American Institute of Physics (AIP)
Volume 98
Issue 9
First Page 6749
Last Page 6757
DOI 10.1063/1.464767
Language eng
Bibliographic Citation Knight, L. B., McKinley, A. J., Babb, R. M., Morse, M. D., & Arrington, C. A. (1993). Laser vaporization generation of the SiB and SiAi radicals for matrix isolation electron spin resonance studies: comparison with theoretical calculations and assignment of their electronic ground states as X ??. Journal of Chemical Physics, 98(9), 6749-57.
Rights Management ¬©American Institute of Physics. The following article appeared in Knight, L. B., McKinley, A. J., Babb, R. M., Morse, M. D., & Arrington, C. A. (1993). Laser vaporization generation of the SiB and SiAi radicals for matrix isolation electron spin resonance studies: comparison with theoretical calculations and assignment of their electronic ground states as X ??. Journal of Chemical Physics, 98(9), 6749-57. and may be found at http://dx.doi.org/10.1063/1.464767.
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Identifier ir-main,16941
ARK ark:/87278/s6hm5smv
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Date Created 2012-06-13
Date Modified 2012-06-13
ID 703456
Reference URL https://collections.lib.utah.edu/ark:/87278/s6hm5smv
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