Local strain-mediated chemical potential control of quantum dot self-organization in heteroepitaxy

Update item information
Publication Type Journal Article
School or College College of Engineering
Department Materials Science & Engineering
Creator Liu, Feng
Other Author Yang, Bin; Lagally, Max G.
Title Local strain-mediated chemical potential control of quantum dot self-organization in heteroepitaxy
Date 2004-01
Description From observations of self-assembly of Ge quantum dots directed by substrate morphology, we propose the concept of control of ordering in heteroepitaxy by a local strain-mediated surface chemical potential. Using quite simple lithography, we demonstrate directed quantum dot ordering. The strain part of the chemical potential is caused by the spatially nonuniform relaxation of the strained layer, which in our study is the Ge wetting layer, but, more generally, can be a deposited strained buffer layer. This model provides a consistent picture of prior literature.
Type Text
Publisher American Physical Society
Journal Title Physical Review Letters
Volume 92
Issue 2
DOI 10.1103/PhysRevLett.92.025502
citatation_issn 0031-9007
Subject Self-organization; Heteroepitaxy; Chemical potential control; Ge quantum dots
Subject LCSH Strain theory (Chemistry); Self-organizing systems; Quantum dots; Epitaxy
Language eng
Bibliographic Citation Yang, B., Liu, F., & Lagally, M. G. (2004). Local strain-mediated chemical potential control of quantum dot self-organization in heteroepitaxy. Physical Review Letters, 92(2), 025502.
Rights Management (c) American Physical Society http://dx.doi.org/10.1103/PhysRevLett.92.025502
Format Medium application/pdf
Format Extent 661,890 bytes
Identifier ir-main,12175
ARK ark:/87278/s6pn9pv5
Setname ir_uspace
Date Created 2012-06-13
Date Modified 2021-05-06
ID 703387
Reference URL https://collections.lib.utah.edu/ark:/87278/s6pn9pv5
Back to Search Results