Bi surfactant control of ordering and surface structure in GaInP grown by organometallic vapor phase epitaxy

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Publication Type Journal Article
School or College College of Engineering
Department Electrical & Computer Engineering; Materials Science & Engineering
Creator Stringfellow, Gerald B.
Other Author Jun, S.W.; Lee, R.T.; Fetzer, C.M.; Shurtleff, J.K.; Choi, C.J.; Seong, T.Y.
Title Bi surfactant control of ordering and surface structure in GaInP grown by organometallic vapor phase epitaxy
Date 2000
Description Studies the effect of the surfactant bismuth on the ordering and surface structure in GaInP layers grown by organometallic vapor phase epitaxy. Disordering caused by the addition of bismuth during growth; Changes in surface structure occurring with the disordering.
Type Text
Publisher American Institute of Physics (AIP)
Volume 88
Issue 7
Subject Thin films, Multilayered; Bismuth
Subject LCSH Epitaxy; Metal organic chemical vapor deposition; Surface active agents
Language eng
Bibliographic Citation Jun, S.W., Lee, R.T., Fetzer, C.M., Shurtleff, J.K., Stringfellow, G.B., Choi, C.J., & Seong, T.Y. (2000). "Bi surfactant control of ordering and surface structure in GaInP grown by organometallic vapor phase epitaxy." Journal of Applied Physics, 88(7), 4429
Rights Management (c)American Institute of Physics. The following article appeared in Jun, S.W., Lee, R.T., Fetzer, C.M., Shurtleff, J.K., Stringfellow, G.B., Choi, C.J., & Seong, T.Y., Journal of Applied Physics. 88(7), 2000
Format Medium application/pdf
Identifier ir-main,11743
ARK ark:/87278/s6f76wqd
Setname ir_uspace
Date Created 2012-06-13
Date Modified 2021-05-06
ID 703182
Reference URL https://collections.lib.utah.edu/ark:/87278/s6f76wqd
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