| Publication Type |
Journal Article |
| School or College |
College of Science |
| Department |
Physics |
| Creator |
Williams, Clayton C. |
| Other Author |
Kang, C. J.; Kim, C. K.; Lera, J. D.; Kuk, Y.; Mang, K. M.; Lee, J. G.; Suh, K. S. |
| Title |
Depth dependent carrier density profile by scanning capacitance microscopy |
| Date |
1997 |
| Description |
The depth dependent carrier density was measured on an arsenic implanted silicon sample using scanning capacitance microscopy (SCM). The capacitance versus voltage scan was performed by applying dc biases with a dither ac signal. A strong dc bias dependence was observed at the interface of an abrupt junction between n1 and p. The bias dependent SCM images show good agreement with quasi-three dimensional simulations, suggesting that they can be used to map a device structure. |
| Type |
Text |
| Publisher |
American Institute of Physics (AIP) |
| Volume |
71 |
| Issue |
11 |
| First Page |
1546 |
| Last Page |
1548 |
| Subject |
Carrier density; Silicon submicrometer technology; Scanning capacitance microscopy |
| Subject LCSH |
Microscopy; Catalyst supports |
| Language |
eng |
| Bibliographic Citation |
Kang, C. J., Kim, C. K., Lera, J. D., Kuk, Y., Mang, K. M., Lee, J. G., Suh, K. S., & Williams, C. C. (1997). Depth dependent carrier density profile by scanning capacitance microscopy. Applied Physics Letters, 71(11), 1546-8. |
| Rights Management |
(c)American Institute of Physics. The following article appeared in Kang, C. J., Kim, C. K., Lera, J. D., Kuk, Y., Mang, K. M., Lee, J. G., Suh, K. S., & Williams, C. C. Depth dependent carrier density profile by scanning capacitance microscopy. Applied Physics Letters, 71, 1997. and may be found at http://link.aip.org/link/?APPLAB/71/1546/1 |
| Format Medium |
application/pdf |
| Format Extent |
252,407 Bytes |
| Identifier |
ir-main,5164 |
| ARK |
ark:/87278/s6x06r5h |
| Setname |
ir_uspace |
| ID |
703040 |
| Reference URL |
https://collections.lib.utah.edu/ark:/87278/s6x06r5h |
