Picosecond optical time-of-flight studies of carrier transport in α-Si:H/α-SiNx:H multilayers

Update Item Information
Publication Type Journal Article
School or College College of Science
Department Physics
Creator Vardeny, Zeev Valentine
Other Author Grahn, H. T.; Tauc, J.; Abeles, B.
Title Picosecond optical time-of-flight studies of carrier transport in α-Si:H/α-SiNx:H multilayers
Date 1987-09
Description We report time-of-flight experiments in the time range from 0.2 psec to 1.8 nsec in 0-Si:H-a-SiNx:H multilayer structures using a purely optical technique. The transport mechanism of photoexcited carriers is shown to be dispersive and its characteristic parameters are determined in the temperature range 70-300 K.
Type Text
Publisher American Physical Society
Journal Title Physical Review Letters
Volume 59
Issue 10
First Page 1144
Last Page 1147
DOI 10.1103/PhysRevLett.59.1144
citatation_issn 0031-9007
Subject Time-of-flight; Amorphous silicon; Carrier transport; Photoexcited carriers
Subject LCSH Amorphous semiconductors -- Optical properties; Thin films, Multilayered -- Optical properties
Language eng
Bibliographic Citation Grahn, H. T., Vardeny, Z. V., Tauc, J., & Abeles, B. (1987). Picosecond optical time-of-flight studies of carrier transport in α-Si:H/α-SiNx:H multilayers. Physical Review Letters, 59(10), 1144-7.
Rights Management (c) American Physical Society http://dx.doi.org/10.1103/PhysRevLett.59.1144
Format Medium application/pdf
Format Extent 314,953 bytes
Identifier ir-main,9643
ARK ark:/87278/s6m623f0
Setname ir_uspace
ID 702935
Reference URL https://collections.lib.utah.edu/ark:/87278/s6m623f0
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