Kinetics of Te doping in disordering GaInP grown by organometallic vapor phase epitaxy

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Publication Type Journal Article
School or College College of Engineering
Department Electrical & Computer Engineering; Materials Science & Engineering
Creator Stringfellow, Gerald B.
Other Author Jun, S.W.; Howard, A.D.; Fetzer, G.M.; Shurtleff, J.K.
Title Kinetics of Te doping in disordering GaInP grown by organometallic vapor phase epitaxy
Date 2001
Description Te-doped GaInP epitaxial layers were grown by organometallic vapor phase epitaxy in an effort to clarify the Te disordering mechanism. CuPt ordered GaInP is produced under normal growth conditions. The addition of Te has been reported to induce disorder. One suggested mechanism for disordering GaInP is the increased step velocity caused by the addition of Te. To test this hypothesis, the effects of growth rate and growth temperature on the disordering effect of Te were studied. The Te/III ratio in the vapor and the partial pressure of the P precursor, tertiarybutylphosphine, were kept constant. The behavior of Te incorporation is found to be unusual. The decrease with increasing temperature is consistent with Te acting as a volatile impurity. However, the Te incorporation is also found to be inversely proportional to the growth rate, a characteristic of nonvolatile dopants. A suggested solution to this apparent contradiction is that the Te, which accumulates at step edges, is not able to keep pace with the steps when they move at the higher velocities. As the growth rate was decreased, with a corresponding decrease in measured step velocity, the degree of order was observed to increase, in support of this kinetic model. GaInP layers grown at higher temperatures were observed to become much less ordered. Analysis of these data indicates that the effect is due mainly to the effect of temperature on step velocity. The direct correlation between the step velocity and the degree of order, as these two growth parameters were varied, confirms that Te disorders GaInP for kinetic reasons.
Type Text
Publisher American Institute of Physics (AIP)
Journal Title Journal of Applied Physics
Volume 90
Issue 12
First Page 6048
Last Page 6053
DOI 10.1063/1.1416857
citatation_issn 218979
Subject Crystal growth; Epitaxy; Dynamics
Subject LCSH Epitaxy; Metal organic chemical vapor deposition; Order-disorder in alloys
Dissertation Institution University of Utah
Language eng
Bibliographic Citation Jun, S. W., Stringfellow, G. B., Howard, A. D., Fetzer, G. M., & Shurtleff, J. K. (2001). "Kinetics of Te doping in disordering GaInP grown by organometallic vapor phase epitaxy." Journal of Applied Physics 90(12), 6048-53.
Rights Management (c)American Institute of Physics. The following article appeared in Jun, S.W., Stringfellow, G.B., Howard, A.D., Fetzer, G.M., & Shurtleff, J.K., Journal of Applied Physics. 90(12), 2001 and may be found at DOI: 10.1063/1.1416857
Format Medium application/pdf
Format Extent 117,978 Bytes
Identifier uspace/id/591
ARK ark:/87278/s61z4nhk
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Date Created 2012-06-13
Date Modified 2021-05-06
ID 702803
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