Effects of V/III ratio on ordering and antiphase boundaries in GaInP layers

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Publication Type Journal Article
School or College College of Engineering
Department Electrical & Computer Engineering; Materials Science & Engineering
Creator Stringfellow, Gerald B.
Other Author Seong, Tae-Yeon; Kim, Joon Hyung; Chun, Y. S.
Title Effects of V/III ratio on ordering and antiphase boundaries in GaInP layers
Date 1997
Description Transmission electron microscope (TEM) and transmission electron diffraction (TED) studies have been performed to investigate the effects of V/III ratio on ordering and antiphase boundaries (APBs) in organometallic vapor phase epitaxial Ga0.5In0.5P layers grown onto (001) GaAs vicinal substrates at 670 °C. TED and TEM examination showed that the degree of order is higher in the layer grown using a V/III ratio of 160 than in the layer grown using a V/III ratio of 40. TEM results showed that the higher V/III ratio could be used to suppress APBs. In addition, the growth of order-induced heterostructures, where the V/III ratio is increased abruptly during growth, could be used to block the propagation of APBs. Mechanisms are proposed to explain these phenomena.
Type Text
Publisher American Institute of Physics (AIP)
Volume 70
Issue 23
Subject Antiphase boundaries; APB; Heterostructures; Organometallics
Subject LCSH Epitaxy; Metal organic chemical vapor deposition
Language eng
Bibliographic Citation Seong, T.Y., Kim, J.H., Chun, Y.S., & Stringfellow, G.B. (1997). "Effects of V/III ratio on ordering and antiphase boundaries in GaInP layers." Applied Physics Letters, 70(23), 3137.
Rights Management (c)American Institute of Physics. The following article appeared in Seong, T.Y., Kim, J.H., Chun, Y.S., & Stringfellow, G.B. Applied Physics Letters, 70(23), 1997
Format Medium application/pdf
Format Extent 74,752 Bytes
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Reference URL https://collections.lib.utah.edu/ark:/87278/s6hq4h1k
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