| Publication Type |
Journal Article |
| School or College |
College of Engineering |
| Department |
Electrical & Computer Engineering |
| Creator |
Stringfellow, Gerald B. |
| Other Author |
Howard, A. D. |
| Title |
Effects of low surfactant Sb coverage on Zn and C incorporation in GaP |
| Date |
2007 |
| Description |
The use of surfactants during the vapor phase growth of III-V materials to control fundamental characteristics of epitaxial layers is becoming increasingly important. We have investigated the remarkable effects of Sb, from triethylantimony (TESb) Pyrolysis, on the Zn doping during the organometallic vapor phase epitaxial growth (OMVPE) of GaP. Antimony is isoelectric with the P host; therefore it is not a dopant in this material. It is also much larger than P so little incorporation occurs. |
| Type |
Text |
| Publisher |
American Institute of Physics (AIP) |
| Journal Title |
Journal of Applied Physics |
| Volume |
102 |
| Issue |
7 |
| First Page |
74920 |
| DOI |
10.1063/1.2778635 |
| citatation_issn |
218979 |
| Subject |
Surfactants; Organometallic vapor phase epitaxy; Gallium phosphide |
| Subject LCSH |
Epitaxy; Antimony; Doped semiconductors; Semiconductor doping |
| Language |
eng |
| Bibliographic Citation |
Howard, A. D., & Stringfellow, G. B. (2007). Effects of low surfactant Sb coverage on Zn and C incorporation in GaP. Journal of Applied Physics, 102(7), no.074920. |
| Rights Management |
(c)American Institute of Physics. The following article appeared in Howard, A. D., & Stringfellow, G. B., Journal of Applied Physics, 102(7), 2007 and may be found at http://dx.doi.org/10.1063/1.2778635. |
| Format Medium |
application/pdf |
| Format Extent |
485,200 bytes |
| Identifier |
ir-main,7822 |
| ARK |
ark:/87278/s6ng57rw |
| Setname |
ir_uspace |
| ID |
702659 |
| Reference URL |
https://collections.lib.utah.edu/ark:/87278/s6ng57rw |
