Nonmagnetic compensation in ferromagnetic Ga1-xMnxAs and Ga1-xMnxP synthesized by ion implantation and pulsed-laser melting

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Publication Type Journal Article
School or College College of Engineering
Department Materials Science & Engineering
Creator Scarpulla, Michael
Other Author Stone, P. R.; Sharp, I. D.; Haller, E. E.; Dubon, O. D.; Beeman, J. W.; Yu, K. M.
Title Nonmagnetic compensation in ferromagnetic Ga1-xMnxAs and Ga1-xMnxP synthesized by ion implantation and pulsed-laser melting
Date 2008
Description The electronic and magnetic effects of intentional compensation with nonmagnetic donors are investigated in the ferromagnetic semiconductors Ga1−xMnxAs and Ga1−xMnxP synthesized using ion implantation and pulsed-laser melting. It is demonstrated that compensation with nonmagnetic donors and MnI have similar qualitative effects on materials properties. With compensation TC decreases, resistivity increases, and stronger magnetoresistance and anomalous Hall effect attributed to skew scattering are observed. Ga1−xMnxAs can be controllably compensated with Te through a metal-insulator transition through which the magnetic and electrical properties vary continuously. The resistivity of insulating Ga1−xMnxAs:Te can be described by thermal activation to the mobility edge and simply activated hopping transport. Ga1−xMnxP doped with S is insulating at all compositions but shows decreasing TC with compensation. The existence of a ferromagnetic insulating state in Ga1−xMnxAs:Te and Ga1−xMnxP:S having TC's of the same order as the uncompensated materials demonstrates that localized holes are effective at mediating global ferromagnetism in ferromagnetic semiconductors through the percolation of ferromagnetic "puddles" at low temperatures.
Type Text
Publisher American Institute of Physics (AIP)
Journal Title Journal of Applied Physics
Volume 103
Issue 12
First Page 123906
DOI 10.1063/1.2940361
citatation_issn 218979
Subject Ferromagnetic semiconductors
Subject LCSH Diluted magnetic semiconductors; Semiconductors -- Magnetic properties; Ferromagnetic resonance; Magnetoresistance; Semiconductors -- Electric properties; Holes (Electron deficiencies); Semiconductor doping; Thin films; Semiconductors -- Defects
Language eng
Bibliographic Citation Scarpulla, M. A., Stone, P. R., Sharp, I. D., Haller, E. E., Dubon, O. D., Beeman, J. W., & Yu, K. M. (2008). Nonmagnetic compensation in ferromagnetic Ga1-xMnxAs and Ga1-xMnxP synthesized by ion implantation and pulsed-laser melting. Journal of Applied Physics, 103(12), 123906.
Rights Management (c)American Institute of Physics. The following article appeared in Scarpulla, M. A., Stone, P. R., Sharp, I. D., Haller, E. E., Dubon, O. D., Beeman, J. W., & Yu, K. M., Journal of Applied Physics, 103(12), 2008 and may be found at http://dx.doi.org/10.1063/1.2940361
Format Medium application/pdf
Format Extent 696,451 bytes
Identifier ir-main,12251
ARK ark:/87278/s6hd8crr
Setname ir_uspace
Date Created 2012-06-13
Date Modified 2021-05-06
ID 702545
Reference URL https://collections.lib.utah.edu/ark:/87278/s6hd8crr
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