Epitaxial growth of TaN films on Si(100) and Si(111) using a TiN buffer layer

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Publication Type Journal Article
School or College College of Engineering
Department Materials Science & Engineering
Creator Tiwari, Ashutosh
Other Author Wang, H.; Kvit, A.; Zhang, X.; Narayan, J.
Title Epitaxial growth of TaN films on Si(100) and Si(111) using a TiN buffer layer
Date 2002
Description We have deposited high-quality epitaxial B1 NaCl-structured TaN films on Si(100) and Si(111) substrates with TiN as the buffer layer, using pulsed laser deposition. Our method exploits the concept of lattice-matching epitaxy between TiN and TaN and domain-matching epitaxy between TiN and silicon. X-ray diffraction, transmission electron microscopy, and scanning transmission electron microscopy (Z-contrast) experiments confirmed the single-crystalline nature of the films with cube-on-cube epitaxy. The stoichiometry of the TaN films was determined to be nitrogen deficient (TaN0.9560.05) by Rutherford backscattering. Resistivity of the TaN films was found to be ~220 μΩ cm at room temperature with a temperature coefficient of resistivity of -0.5 μΩ K21.
Type Text
Publisher American Institute of Physics (AIP)
Volume 80
Issue 13
First Page 2323
Last Page 2325
DOI 10.1063/1.146652
Subject Diffusion barriers; Buffer layers; Tantalum nitride; Silicon substrate
Subject LCSH Diffusion coatings; Titanium nitride; Tantalum films; Thin films; Epitaxy
Language eng
Bibliographic Citation Wang, H., Tiwari, A., Kvit, A., Zhang, X., & Narayan, J. (2002). Epitaxial growth of TaN films on Si(100) and Si(111) using a TiN buffer layer. Applied Physics Letters, 80(13), 2323-5.
Rights Management (c)American Institute of Physics. The following article appeared in Wang, H., Tiwari, A., Kvit, A., Zhang, X., & Narayan, J., Applied Physics Letters, 80(13), 2002 and may be found at http://dx.doi.org/10.1063/1.146652
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Format Extent 319,692 bytes
Identifier ir-main,12094
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Setname ir_uspace
ID 702486
Reference URL https://collections.lib.utah.edu/ark:/87278/s6cz3r8d
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