| Publication Type |
Journal Article |
| School or College |
College of Engineering |
| Department |
Electrical & Computer Engineering; Materials Science & Engineering |
| Creator |
Stringfellow, Gerald B. |
| Other Author |
Yuan, J.S.; Hsu, C.C.; Cohen, R.M. |
| Title |
Organometallic vapor phase epitaxial growth of AlGaInP |
| Date |
1985 |
| Description |
Alx Ga,, In, _ x _ y P with x + y = 0.51, lattice matched to the GaAs substrate, has been grown by organometaUic vapor phase epitaxy. The simple, horizontal, IR heated system operates at atmospheric pressure using the reactants TMA1, TMGa, TMln, PH3, and K2. Alloys giving room temperature, band edge photoluminescence (PL) have been grown in the temperature range 625-780 °C. Emission wavelengths as short as 5820 A (2.13 eV) are reported. High growth temperatures are found to give layers with the best surface morphology and PL intensity. The use of high temperatures is especially important for high Al content alloys. PL at x = 0.2 is obtained only for temperatures above 740 °C |
| Type |
Text |
| Publisher |
American Institute of Physics (AIP) |
| Volume |
57 |
| Issue |
4 |
| First Page |
1380 |
| Last Page |
1383 |
| Subject |
Liquid phase epitaxial growth; LPE; Alloys; Surface morphology |
| Subject LCSH |
Epitaxy; Metal organic chemical vapor deposition |
| Language |
eng |
| Bibliographic Citation |
Yuan, J.S., Hsu, C.C., Cohen, R.M., & Stringfellow, G.B. (1985). Organometallic vapor phase epitaxial growth of AlGaInP. Journal of Applied Physics, 57(4),1380-1383. |
| Rights Management |
(c)American Institute of Physics. The following article appeared in Yuan, J.S., Hsu, C.C., Cohen, R.M., & Stringfellow, G.B., Journal of Applied Physics. 57, 1985 |
| Format Medium |
application/pdf |
| Format Extent |
382,138 Bytes |
| Identifier |
ir-main,743 |
| ARK |
ark:/87278/s64j0z6j |
| Setname |
ir_uspace |
| ID |
702284 |
| Reference URL |
https://collections.lib.utah.edu/ark:/87278/s64j0z6j |
